Document information
- University
- Politecnico di Milano
- Degree programme
- Computer Engineering
- Subject
- Fondamenti di Elettronica
- Academic year
- 2020-2021
- Classification
- Exam · Full exam
- Content
- Exam paper only
- Original format
- Text
- Searchable text
Study material for Fondamenti di Elettronica, shared by the Studwiz community and reviewed by moderators.
Study material for Fondamenti di Elettronica, shared by the Studwiz community and reviewed by moderators.
Import quality: text was extracted directly from the original document.
Representative passages recognised in different parts of the material. The full extracted text remains available to search, while this compact preview makes the page easier to read.
FdE 21/07/2017 – BOZZA DI SOLUZIONE Es.1 a) Con A=B=1 OUT=3.3V, altrimenti OUT=0.7V. b) PDIN = C*VDD*(VDD-0.7V)*fA = 1pF * 3.3V * 2.6V * 3MHz = 25.74µW c) f(A,B)=AND. Servono due porte CMOS in cascata: NAND+INV. Es.2 a) VG=1.6V, Imos=0.512mA. Vout1=5.4V-1.6V=3.8V. Vout2=6V. entrambi i mos in saturazione. gm1=gm2=1.28mA/V b) 1 zero nell’origine, fp1=1/(2*π*C1*R1//R2)= 108Hz, fp2=1/(2*π*C2*(1/gm2+R3))=89.4MHz, fz=1/(2*π*C2*R3)=159MHz. In DC, G=0; @MF, G=1; @HF, G=0.56. c) 2 zeri nell’origine, fp1=1/(2*π*C1*R1//R2)= 108Hz, fp2=1/(2*π*C2*(1/gm2+R3))=89.4MHz In DC, G=0; @HF, G=0.56. d) @HF, vout=-0.56*vin. - Vgs1 + vin – (Vout1 – 0.56vin) < VT . vin<1.92V. - vin>-0.8V Es.3 a) V-=V+=0V. Imos=1mA. VoutOPAMP=2V. VDmos=4V. b) LSB=2.44mV. effetto Vos: Vout=0.5mV=0.2LSB; effetto IBIAS: Vout=0V. c) Passa basso, guadagno in continua pari a +1, polo a f=1/(2*π*C*R1)=10.6MHz Fase: 0 a bassa frequenza, -90° all’infinito. d) Gloop(s)=-A(s). PM=90°, il circuito è stabile. e) TSAMPLE=25µs-13µs=12µs. caso pessimo ΔV1=6V. εSAMPLE=6Ve(-TSAMPLE/τ)<1LSB. τ=Ron*C. Considerando caso pessimo per Ron, ovvero (Vgs-Vt)MIN,si ha k>1.15mA/V2.
First page of the document.